Semiconductor Materials, Devices and Fabrication

In stock
Author : Parasuraman Swaminathan
Price : INR 449
ISBN 13 : 9788126566594
Pages : 380
Type : Paperbound

Semiconductor Materials, Devices, and Fabrication and the associated media content in the DVDs provide an understanding of the materials, devices, and processing techniques used in the current microelectronics industry. The 2 DVDs include 32 lectures, approximately an hour each. The lectures map onto the individual chapters in the book.  The content is divided into three parts. Part I explains the basic physics behind semiconductor materials. Part II introduces electronic devices including optical devices. Part III discusses current manufacturing processes in the semiconductor industry, starting from wafer production to final integrated circuit development. The focus in this part is on industry challenges during miniaturization and methods to overcome these challenges.



About the Author


Part I – Semiconductor Materials

Chapter 1 Electronic Materials

1.1 Introduction

1.2 Molecular Orbital Formation

1.3 Molecular Orbitals in Extended Systems

1.4 Energy Bands in Metals


Chapter 2 Semiconductors: Introduction

2.1 Introduction

2.2 Band Formation in Semiconductors

2.3 Classification of Semiconductors

2.4 Electron Effective Mass


Chapter 3 Electron Statistics in a Solid

3.1 Density of States

3.2 Electron Occupation Probability

3.3 Density of States in Silver

3.4 Fermi Function versus Boltzmann Function


Chapter 4 Intrinsic Semiconductors

Learning Objectives

4.1 Introduction

4.2 Intrinsic Silicon

4.3 Conductivity Equation

4.4 Carrier Concentration in Semiconductors

4.5 Fermi Level Position in Intrinsic Semiconductors

4.6 Temperature Effect on ni


Chapter 5 Extrinsic Semiconductors

5.1 Introduction

5.2 Doping Types

5.3 Compensation Doping

5.4 Dopant Materials

5.5 Fermi Level in Extrinsic Semiconductors

5.6 Temperature Dependence of Carrier Concentration

5.7 Carrier Mobility

5.8 Degenerate Semiconductors

5.9 Amorphous Semiconductors


Part II – Devices

Chapter 6 Metal–Semiconductor Junctions

6.1 Metal–Metal Junctions

6.2 Schottky Junctions

6.3 Ohmic Junctions


Chapter 7 pn Junctions

7.1 Introduction

7.2 pn Junction

7.3 Calculation of Junction Parameters

7.4 Junction Potential versus Fermi Level Position

7.5 pn Junction Under Bias

7.6 Reverse Bias

7.7 Junction Breakdown

7.8 Heterojunctions


Chapter 8 Transistors

8.1 Introduction

8.2 Bipolar Junction Transistor

8.3 Junction Field-effect Transistor

8.4 Metal Oxide Semiconductor FET

8.5 MOS Band Structure

8.6 Role of Oxide Layer


Chapter 9 Light Semiconductor Interaction

9.1 Optical Absorption

9.2 Recombination and Carrier Lifetime

9.3 Continuity Equation


Chapter 10 LEDs and LASERs

10.1 Optical Emission

10.2 pn Junction-based LEDs

10.3 LED Materials

10.4 Solid-state LASERs

10.5 Device Structure

10.6 Specialty Lasers


Chapter 11 Photodetectors and Solar Cells

11.1 Photodetectors Working Principle

11.2 Types of Photodetectors

11.3 Solar Cell Basics

11.4 pn Junction Solar Cell

11.5 Solar Cell Materials and Efficiency


Part III – Fabrication

Chapter 12 Development of ICs

12.1 Introduction

12.2 Integrated Circuits

12.3 Device Miniaturization

12.4 Challenges in IC Manufacturing

12.5 IC Manufacturing Stages


Chapter 13 Silicon Wafer Manufacturing

13.1 Wafer Specification

13.2 Polysilicon Manufacture

13.3 Single Crystal Si Manufacture

13.4 Wafer Manufacturing


Chapter 14 Integrated Circuit Fabrication

14.1 Fabrication Overview

14.2 Layering

14.3 Patterning

14.4 Doping

14.5 Heat Treatment

14.6 MOSFET Fabrication


Chapter 15 Oxidation and Doping

15.1 Oxidation

15.2 Types of Oxidation Processes

15.2.1 Oxide Growth Model and Parameters

15.3 Oxide Furnaces

15.4 Doping Techniques

15.5 Thermal Diffusion

15.6 Ion Implantation


Chapter 16 Lithography

16.1 Introduction

16.2 Process Overview

16.3 Photoresists

16.4 Mask Making

16.5 Photoresist Application

16.6 Alignment and Exposure

16.7 Developing

16.8 Lithography Advances


Chapter 17 Etching and Deposition

17.1 Etching Basics

17.2 Wet Etching

17.3 Dry Etching

17.4 Deposition


Chapter 18 Metallization and Polishing

18.1 Metallization Basics

18.2 Metallization Materials

18.3 Metallization Techniques

18.4 Planarization

18.5 Copper Dual-Damascene Process


Chapter 19 IC Process Control

19.1 Process Evaluation

19.2 Electrical Measurements

19.3 Thickness Measurement

19.4 Defect Detection

19.5 Process Evaluation

19.6 Yield Models and Fabrication Costs

19.7 Clean Room Contamination

19.8 Clean Room Design and Materials


Chapter 20 IC Architecture and Packaging

20.1 Integrated Circuit Components

20.2 MEMS Systems

20.3 Silicon Micro-architecture

20.4 Packaging



Practice Questions






Parasuraman Swaminathan is an Assistant Professor in the Department of Metallurgical and Materials Engineering at the Indian Institute of Technology, Madras (IITM). He has been a faculty at the institute since July 2013. Dr. Parasuraman’s research group in IITM works on printed electronics and physical vapor deposition of thin films and nanoparticles. They are developing low-cost electronic devices by adapting conventional printing techniques to metals and semiconductors. Dr. Parasuraman is currently working on photovoltaics, light emitting diodes, and sensors, based on metal oxide nanoparticles. His group also works on thermal evaporation of metallic thin films and nanoparticles and on ways to integrate them with printed devices to make high efficiency hybrid devices.


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